IC Failure Analysis Microscopy > Laser Signal Injection

Laser Signal Injection

Locate shorts, junction defects, problem VIAs and other integrated circuit defects with Laser Signal Injection Microscopy (LSIM). An LSIM works by scanning a laser beam through a microscope lens, over an integrated circuit while monitoring the circuit input and output for laser induced changes. By choosing the laser wavelength, different effects can be produced. Short wavelength lasers produce electron & hole pairs, (photo-carriers) in the semiconductor. These photo-generated carriers reveal failure sites in transistors and PN junctions. Longer wavelength lasers induce heating and that reveals resistive and ohmic problems. Both photo-carrier generation and microthermal heating may be performed from the front or backside of the wafer, so the LSIM is a powerful backside inspection tool .
The LSIM is available on a dedicated
optical head as pictured at
right, or on QFI’s Multi Sensor
Platform as seen at left. The Multi
Sensor Platform combines the
LSIM with Emission Microscopy
and IR Thermal Hot Spot Detection.

Specifications

Laser Capacity
May be fitted with one or dual lasers
Wavelength Options 532 nm (diode laser) for high resolution front side thermal
XIVA and photo-carrier XIVA
1064 nm (ND:YAG) for backside photo-carrier XIVA fault
detection.
1340 nm (Nd:YVO4) for backside thermal XIVA shorts and defect detection.
User Selectable Full Field Sampling Interchangeable X and Y scan directions
Region of interest scanning,
Scan Based Zoom (same number of pixel samples for
a smaller scan sweep).
User Selectable Scan Capabilities 256 x 256 (fast for focusing, navigating)
512 x 512 (normal speed and resolution)
1024 x 1024 (fine, sampling)
Field of View
14 mm x 14 mm divided by selected magnification
e.g., 2.8 mm @ 5x, 280 um @ 50x, 140 um @ 100x
Frame Rate > 2Hz at 256 x 256 sampling
Resolution (diffraction) Resolution is calculated from (0.4∗wavelength) / (Lens N.A.)

532 nm Laser w/ Mitutoyo 100x NIR (N.A.=0.5)

0.42 microns

1064 nm Laser w/ Mitutoyo 100x NIR (N.A.=0.5)

0.85 microns

1340 nm Laser w/ Mitutoyo 100x NIR (N.A.=0.5)

1.1 microns
A/D Resolution
12 bits imaging and XIVA

XIVA Electronics
Maximum Bias Output
10 VDC & 2 Amps
Input Coupling AC/DC
User Selectable Input Filters 100 KHz, 10 KHz, 1 KHz
User Selectable Amplifier Gain 1, 10, 100

 

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